Increased photo- and electroluminescence by zone annealing of spin-coated and vacuum-sublimed amorphous films producing crystalline thin films

Chong-Yang Liu; Bard, Allen J.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5431
Academic Journal
Spin-coated and vacuum sublimed amorphous thin films (∼100 nm thick) were converted into single crystalline films with a simple moving-zone-annealing technique, in which a heated metal wire generated a narrow annealed zone in the film as it is moved across the sample. This annealing resulted in both the photoluminescence and electroluminescence to increase dramatically (by 3–4 times), for example with Ru(bpy)[sub 3](ClO[sub 4])[sub 2] and aluminum 8-hydroxyquinoline, (Alq[sub 3]), as light emitting devices. This technique is of interest in improving the behavior of highly luminescent thin film optoelectronic devices. © 2003 American Institute of Physics.


Related Articles

  • Electronic and magnetic properties of MnAs nanoclusters studied by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. Okabayashi, J.; Mizuguchi, M.; Oshima, M.; Shimizu, H.; Tanaka, M.; Yuri, M.; Chen, C.T. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5485 

    We have investigated the electronic and magnetic properties of a MnAs:GaAs granular film with MnAs clusters embedded in the GaAs matrix fabricated by high-temperature annealing of Ga[sub 1-x]Mn[sub x]As using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The...

  • Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments. Sung-Gi Ri; Takeuchi, Daisuke; Tokuda, Norio; Okushi, Hideyo; Yamasaki, Satoshi // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112112 

    Schottky barrier heights of metal (Al, Au, Ni, and Pt) contacts on boron (B)-doped (111) homoepitaxial diamond films are investigated as a function of surface oxidation treatments before metal deposition [after wet-chemical oxidation (WO), WO followed by annealing in Ar atmosphere (WO-AN) and...

  • Effect of electric-field-assisted thermal annealing of poly(4-vinylphenol) film on its dielectric constant. Ji Hoon Park; Kim, Eugene // Applied Physics Letters;3/10/2008, Vol. 92 Issue 10, p103311 

    We investigated the effect of annealing a polymeric dielectric film in the presence of an oscillating electric field on its dielectric constant. Films were prepared with the vertical structure of electrode/poly(4-vinylphenol)/electrode and annealed at a temperature above the glass transition...

  • Probing thin-film morphology of conjugated polymers by Raman spectroscopy. Winfield, Jessica M.; Donley, Carrie L.; Friend, Richard H.; Kim, Ji-Seon // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p024902 

    We use Raman spectroscopy to investigate the thin-film morphology of conjugated polymers [poly(9,9-di-n-octylfluorene-alt-benzothiadiazole (F8BT)] in terms of the polymer chain conformation at interfaces with quartz, a crosslinked benzocyclobutene derivative, polyvinylphenol, and...

  • Carbon-mediated growth of thin, fully relaxed germanium films on silicon. Tetzlaff, D.; Wietler, T. F.; Bugiel, E.; Osten, H. J. // Applied Physics Letters;1/2/2012, Vol. 100 Issue 1, p012108 

    Smooth, fully relaxed Ge layers (thickness below 100 nm) were grown directly on Si(001) in a cyclic process flow. Each cycle consists of a low temperature epitaxy step followed by the deposition of less than a monolayer of carbon and subsequent thermal annealing. Full strain relaxation was...

  • Quantum size effects in Bi films grown on GaAs (110). Abu-Samak, Mahmoud // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123714 

    Photoemission results, obtained with a helium-discharge lamp on the Bi/GaAs(110) interface shows strong modifications in the electronic structure of the low temperature deposited Bi overlayer upon annealing to room temperature, accompanied by developing of a sharp low energy electron-diffraction...

  • Highly oriented Hg-Ba-Ca-Cu-O superconducting thin films. Adachi, Hideaki; Satoh, Toshifumi // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3628 

    Demonstrates the preparation of Hg-Ba-Ca-Cu-O thin films on SrTiO[sub 3](100) substrates by radio frequency-magnetron sputtering and subsequent annealing. Performance of the annealing treatment in a Hg-free atmosphere; Exhibition of a sharp superconducting transition; Observation of resistivity...

  • Characteristics of 5-eV absorption band in sputter deposited GeO[sub 2]-SiO[sub 2] thin glass films. Junji Nishii; Yamanaka, Hiroshi // Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p2 

    Examines the characteristics of 5-eV absorption band in sputter deposited GeO[sub 2]-SiO[sub 2] thin glass films. Use of the sputtering method in Ar-O[sub 2] atmosphere for thin film glass preparation; Effect of film annealing on the production of intense glass absorption band; Influence of...

  • Metal–insulator transition at room temperature and infrared properties of Nd[sub 0.7]Eu[sub 0.3]NiO[sub 3] thin films. Capon, F.; Laffez, P.; Bardeau, J.-F.; Simon, P.; Lacorre, P.; Zaghrioui, M. // Applied Physics Letters;7/22/2002, Vol. 81 Issue 4, p619 

    Nd[sub 0.7]Eu[sub 0.3]NiO[sub 3] thin films are deposited by rf sputtering and subsequent oxygen pressure annealing on (100) oriented silicon substrate. We characterize the thermochromic properties of films by measuring electrical transition, infrared transmittance, and reflectance. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics