Epitaxial silicon and germanium on buried insulator heterostructures and devices

Bojarczuk, N.A.; Copel, M.; Guha, S.; Narayanan, V.; Preisler, E.J.; Ross, F.M.; Shang, H.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5443
Academic Journal
Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (<10 nm), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers. © 2003 American Institute of Physics.


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