Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation

Bernát, J.; Javorkä, P.; Marso, M.; Kordoš, P.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5455
Academic Journal
Conductivity and Hall effect measurements were performed before and after Si[sub 3]N[sub 4] passivation of intentionally undoped and doped AlGaN/GaN heterostructures on Si and SiC substrates. An increase of the sheet carrier density (up to ∼30%) and a slight decrease of the electron mobility (less than 10%) are found in all samples after passivation. The passivation induced sheet carrier density is 1.5–2×10[sup 12] cm[sup -2] in undoped samples and only 0.7×10[sup 12] cm[sup -2] in 5–10×10[sup 18] cm[sup -3] doped samples. The decrease of the electron mobility after passivation is slightly lower in highly doped samples. The channel conductivity in both types of unpassivated samples on Si and SiC substrates increases with an increase in doping density. After passivation, a well-resolved increase of channel conductivity is observed in the undoped or lightly doped samples and nearly the same channel conductivity results in the highly doped samples. © 2003 American Institute of Physics.


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