Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

Hackbarth, T.; Herzog, H.-J.; Hieber, K.-H.; König, U.; Bollani, M.; Chrastina, D.; von Känel, H.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5464
Academic Journal
This letter reports on the electrical performance of strained Si-based n-type heterostructure field-effect transistors prepared on 500 nm Si[sub 0.56]Ge[sub 0.44] virtual substrates. The method of low-energy plasma-enhanced chemical vapor deposition at low temperature was used for the growth of the relaxed SiGe buffer. The active layers have been deposited by molecular-beam epitaxy. The thin buffer improves the thermal conductivity by a factor of 3 and shows a much lower surface roughness compared to control structures on conventional virtual substrate with a 5-μm-thick graded buffer. Cutoff frequencies of f[sub T]=55 GHz and f[sub max](U)=138 GHz have been achieved which are very close to the results of the control sample. © 2003 American Institute of Physics.


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