TITLE

Stimulated emission in nanocrystalline silicon superlattices

AUTHOR(S)
Ruan, J.; Fauchet, P.M.; Dal Negro, L.; Cazzanelli, M.; Pavesi, L.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5479
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We studied the conditions under which optical gain is measured in nanocrystalline silicon (nc-Si) using the variable stripe length method. Waveguide samples have been produced by magnetron sputtering of alternating layers of Si and SiO[sub 2], followed by high temperature annealing. No optical gain was observed under continuous wave pumping conditions. Under high intensity pulsed excitation, a superlinear fast (10 ns) recombination component yielding an optical gain up to 50 cm-1 has been independently measured in two different laboratories. A control experiment confirmed that the presence of nc-Si is necessary to achieve gain in our structures. © 2003 American Institute of Physics.
ACCESSION #
11753266

 

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