Lateral epitaxial growth of (Ba,Sr)TiO[sub 3] thin films

Jang-Sik Lee, J.; Wang, H.; Sang Yeol Lee; Foltyn, S.R.; Jia, Q.X.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5494
Academic Journal
We report a technique for epitaxial thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth. (Ba,Sr)TiO[sub 3] (BST) thin films were deposited on LaAlO[sub 3] having amorphous SiO[sub x] masking layers with stripe patterns at 450 °C by pulsed-laser deposition. Postannealing was carried out thereafter for lateral epitaxial growth. The difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. Heteroepitaxial growth takes place in the regions of single-crystalline substrates, whereas lateral homoepitaxial growth evolves from the crystallized BST towards the SiO[sub x] masked region during postannealing process. © 2003 American Institute of Physics.


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