Structure, bonding, and band offsets of (100)SrTiO[sub 3]–silicon interfaces

Peacock, P.W.; Robertson, J.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5497
Academic Journal
We derive rules for bonding at interfaces between Si and ionic oxides so that they satisfy valence requirements and give a defect-free interface. These rules are used to analyze epitaxial interfaces of SrTiO[sub 3] on (100)Si. The band offsets are found from the local density of states and it is found possible to modulate the offset. Some proposed interface structures are found to give gap states. © 2003 American Institute of Physics.


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