TITLE

Structure, bonding, and band offsets of (100)SrTiO[sub 3]–silicon interfaces

AUTHOR(S)
Peacock, P.W.; Robertson, J.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5497
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We derive rules for bonding at interfaces between Si and ionic oxides so that they satisfy valence requirements and give a defect-free interface. These rules are used to analyze epitaxial interfaces of SrTiO[sub 3] on (100)Si. The band offsets are found from the local density of states and it is found possible to modulate the offset. Some proposed interface structures are found to give gap states. © 2003 American Institute of Physics.
ACCESSION #
11753260

 

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