High-k properties of atomic-layer-deposited HfO[sub 2] films using a nitrogen-containing Hf[N(CH[sub 3])[sub 2]][sub 4] precursor and H[sub 2]O oxidant

Moonju Cho, Noriaki; Hong Bae Park; Jaehoo Park, Noriaki; Suk Woo Lee, Noriaki; Cheol Seong Hwang; Gi Hoon Jang, Noriaki; Jaeack Jeong, Noriaki
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5503
Academic Journal
HfO[sub 2] thin films were deposited on HF-dipped Si wafers at 300 °C using an atomic-layer-deposition technique with N-containing Hf[N(CH[sub 3])[sub 2]][sub 4] and H[sub 2]O as the precursor and oxidant, respectively. A thin interfacial SiN[sub x] layer was spontaneously formed at the HfO[sub 2]/Si interface during film growth. This interfacial SiN[sub x] layer prevented substrate Si diffusion into the HfO[sub 2] film. Therefore, the reduction in the capacitance density as a result of post-annealing at 800 °C was minimized. The leakage current density was also reduced due to the more amorphous-like structure of the film. Furthermore, the interfacial trap density (D[sub it]) of <5×10[sup 10] cm[sup -2] eV[sup -1] near the midgap energy states was obtained from an as-deposited film that has a capacitance equivalent thickness of 1.8 nm. This D[sub it] value was comparable to that of the well-grown SiO[sub 2]/Si interface. However, the D[sub it] slightly increased after post-annealing as a result of the increased N concentration at the interface, but it was still <1×10[sup 11] cm[sup -2] eV[sup -1]. © 2003 American Institute of Physics.


Related Articles

  • InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation. Fontcuberta i Morral, A.; Zahler, J.M.; Atwater, Harry A.; Ahrenkiel, S.P.; Wanlass, M.W. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5413 

    Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer ∼600-nm-thick films of (100) InP to Si substrates. Cross-section transmission electron microscopy (TEM) shows a transferred crystalline InP layer with no observable defects in the region near the bonded...

  • Single-crystal Nb-doped Pb(Zr,Ti)O3 thin films on Nb-doped SrTiO3 wafers with different orientations. Gong, Wen; Li, Jing-Feng; Chu, Xiangcheng; Gui, Zhilun; Li, Longtu // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3818 

    Single-crystal Nb-doped Pb(Zr,Ti)O3 (PNZT) films were grown on electric conducting single-crystal Nb-doped SrTiO3 (Nb:STO) wafers by a sol-gel method. Although the films were of the same composition and prepared under the same condition, different crystal phases with corresponding preferential...

  • Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process. Xuan, Y.; Hojo, D.; Yasuda, T. // Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5097 

    We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the...

  • Investigation of machine compliance uniformity for nanoindentation screening of wafer-supported libraries. Warren, Oden L.; Dwivedi, Arpit; Wyrobek, Thomas J.; Famodu, Olugbenga O.; Takeuchi, Ichiro // Review of Scientific Instruments;Jun2005, Vol. 76 Issue 6, p062209 

    The reliability of nanoindentation results can depend critically on an accurate assessment of the machine compliance term. The common practice is to determine the machine compliance from a small reference specimen, then apply its value to a much larger wafer-supported library. The present study...

  • Gate oxide induced switch-on undershoot current observed in thin-film transistors. Yan, Feng; Migliorato, Piero; Hong, Yi; Rana, V.; Ishihara, R.; Hiroshima, Y.; Abe, D.; Inoue, S.; Shimoda, T. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253504 

    The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain....

  • Optical Topography Measurement of Patterned Wafers. de Lega, Xavier Colonna; de Groot, Peter // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p432 

    We model the measurement process in an interference microscope and derive libraries of signal signatures corresponding to various types of materials and thin film structures. These libraries allow calculating the top surface topography of patterned wafer features as well as the thickness of the...

  • Influences of particle size upon room temperature structure of BaTiO3 thin films on p-Si substrates. Ki-Deuk Min; Jongwon Lee; Taek Lee; Jong Chun; Hong-Kee Lee; Dae Kim; Yong Choi; Bong Cho // Journal of Materials Science: Materials in Electronics;Jan2008, Vol. 19 Issue 1, p85 

    The current study performed the growth of BaTiO3 thin film on p-Si substrate by using RF-Magnetron sputtering system and the effects of thickness and particle size of the thin film on several structural characteristics of thin film were investigated. Initially, the interrelationship between the...

  • Yield improvement by defect reduction in metal and via module cleans. Hatcher, Cory; Mortensen, Keith; Lappan, Ray; Prasad, Jagdish // Solid State Technology;Sep2004, Vol. 47 Issue 9, p26 

    Discusses key issues concerning wafer cleaning. Series of tradeoffs involved in the process, such as balancing chemical cost, process throughput and removal efficiency versus particle redeposition, wafer surface alteration and potential etching of exposed thin films; Yield improvement by defect...

  • High speed wafer scale bulge testing for the determination of thin film mechanical properties. Orthner, M. P.; Rieth, L. W.; Solzbacher, F. // Review of Scientific Instruments;May2010, Vol. 81 Issue 5, p055111 

    A wafer scale bulge testing system has been constructed to study the mechanical properties of thin films and microstructures. The custom built test stage was coupled with a pressure regulation system and optical profilometer which gives high accuracy three-dimensional topographic images...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics