TITLE

High-k properties of atomic-layer-deposited HfO[sub 2] films using a nitrogen-containing Hf[N(CH[sub 3])[sub 2]][sub 4] precursor and H[sub 2]O oxidant

AUTHOR(S)
Moonju Cho, Noriaki; Hong Bae Park; Jaehoo Park, Noriaki; Suk Woo Lee, Noriaki; Cheol Seong Hwang; Gi Hoon Jang, Noriaki; Jaeack Jeong, Noriaki
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
HfO[sub 2] thin films were deposited on HF-dipped Si wafers at 300 °C using an atomic-layer-deposition technique with N-containing Hf[N(CH[sub 3])[sub 2]][sub 4] and H[sub 2]O as the precursor and oxidant, respectively. A thin interfacial SiN[sub x] layer was spontaneously formed at the HfO[sub 2]/Si interface during film growth. This interfacial SiN[sub x] layer prevented substrate Si diffusion into the HfO[sub 2] film. Therefore, the reduction in the capacitance density as a result of post-annealing at 800 °C was minimized. The leakage current density was also reduced due to the more amorphous-like structure of the film. Furthermore, the interfacial trap density (D[sub it]) of <5×10[sup 10] cm[sup -2] eV[sup -1] near the midgap energy states was obtained from an as-deposited film that has a capacitance equivalent thickness of 1.8 nm. This D[sub it] value was comparable to that of the well-grown SiO[sub 2]/Si interface. However, the D[sub it] slightly increased after post-annealing as a result of the increased N concentration at the interface, but it was still <1×10[sup 11] cm[sup -2] eV[sup -1]. © 2003 American Institute of Physics.
ACCESSION #
11753258

 

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