TITLE

Fatigue-free RuO[sub 2]/Pb(Zr,Ti)O[sub 3]/RuO[sub 2] capacitor prepared by metalorganic chemical vapor deposition at 395 °C

AUTHOR(S)
Asano, Gouji; Morioka, Hitoshi; Funakubo, Hiroshi; Shibutami, Tetsuo; Oshima, Noriaki
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We deposited an RuO[sub 2]/Pb(Zr[sub 0.40]Ti[sub 0.60])O[sub 3]/RuO[sub 2] capacitor by metalorganic chemical vapor deposition. RuO[sub 2] and Pb(Zr[sub 0.40]Ti[sub 0.60])O[sub 3] films were prepared at 350, 395, and 445 °C from respective Ru(C[sub 7]H[sub 11])(C[sub 7]H[sub 9])–O[sub 2] and Pb(C[sub 11]H[sub 19]O[sub 2])[sub 2]–Zr(O·t-C[sub 4]H[sub 9])[sub 4]–Ti(O·i-C[sub 3]H[sub 7])[sub 4]–O[sub 2] systems. Good ferroelectricity was observed for PZT films deposited at 445 °C but not at 395 °C. However, we obtained ferroelectricity with a remanent polarization above 30 μC/cm[sup 2] by inserting a 10-nm-thick sputtered-Pt layer between the PZT and RuO[sub 2] bottom electrodes, which improved the crystallinity of PZT films even those deposited at 395 °C. This capacitor had hardly any fatigue after 1×10[sup 10] switching cycles. This demonstrates the possibility of preparing fatigue-free capacitor all deposited below 400 °C for high-density ferroelectric random-access memory applications. © 2003 American Institute of Physics.
ACCESSION #
11753257

 

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