Negative differential resistance in a bilayer molecular junction

Le, John D.; Yan He; Hoye, Thomas R.; Mead, Curtis C.; Kiehl, Richard A.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5518
Academic Journal
Negative differential resistance (NDR) is reported for a bilayer molecular junction. The system is comprised of a Hg–alkanethiol//arenethiol–Au bilayer molecular junction formed by bringing into contact a tetradecanethiol self-assembled monolayer (SAM)-coated drop of Hg with the surface of an oligo(phenylene-ethynylene) SAM on Au. Persistent, reproducible NDR is observed in the current–voltage characteristics with peak-to-valley ratios as high as 4.5 at room temperature. These results open a promising line of investigation of structure/function relationship and mechanisms in molecular NDR components. © 2003 American Institute of Physics.


Related Articles

  • Investigation of Polyaniline Thin Film and Schottky Junction with Aluminium for Electrical and Optical Characterization. Saikia, Pronob Jyoti; Sarmah, Pratap Chandra // Materials Sciences & Applications;Aug2011, Vol. 2 Issue 8, p1022 

    Polyaniline Powdered sample was chemically synthesized using aniline and doped with HCl. Ultra thin film and Schottky junction with Al metal have been fabricated from this powdered sample Ultrathin film of polyaniline shows amorphous nature of the film. Two activation energies of these films at...

  • Fluctuated atom-sized junctions in a liquid environment. Tsutsui, Makusu; Taniguchi, Masateru // Journal of Applied Physics;Jan2013, Vol. 113 Issue 2, p024303 

    Durability of atom-sized junctions in a liquid environment was investigated and compared with that in a vacuum. The single atom junction lifetime was measured in an organic solvent under various stretching speed vd ranging from 10 to 0.001 nm/s. We found the natural lifetime of about 1 s for Au...

  • Direct patterning of functional interfaces in oxide heterostructures. Banerjee, N.; Huijben, M.; Koster, G.; Rijnders, G. // Applied Physics Letters;1/23/2012, Vol. 100 Issue 4, p041601 

    We report on the direct patterning of high-quality structures incorporating the LaAlO3-SrTiO3 interface by an epitaxial-liftoff technique avoiding any reactive ion beam etching. Detailed studies of temperature dependent magnetotransport properties were performed on the patterned heterostructures...

  • A first-principles simulation of the semiconductor/water interface. Ursenbach, C.P.; Calhoun, August; Voth, Gregory A. // Journal of Chemical Physics;2/15/1997, Vol. 106 Issue 7, p2811 

    Studies the overall electronic structure of a water/semiconductor interface using ab initio molecular dynamics for realistic solvent configurations. Generation of statistically independent solvent configurations via classical molecular dynamics as a starting point for a realistic sampling of...

  • Growth of pinhole-free epitaxial Yb and Er silicide thin films on atomically clean (111)Si. Tsai, W. C.; Chi, K. S.; Chen, L. J. // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p5353 

    The growth of pinhole-free epitaxial Yb and Er silicide thin films on (111)Si has been achieved by capping appropriate amorphous Si(a-Si) layer at room temperature followed by annealing at 700 °C in an ultrahigh vacuum chamber. The thickness of the a-Si capping layer was selected to be such...

  • Dynamic Image Forces near a Semiconductor�Vacuum Interface: The Role of Quantum-Mechanical Corrections. Voitenko, A. I.; Gabovich, A. M. // Physics of the Solid State;Dec2001, Vol. 43 Issue 12, p2328 

    The energy of dynamic image forces acting on a charged particle moving normally to the semiconductor�vacuum interface or in a vacuum gap between two semiconductors is calculated in the framework of the perturbation theory. The dielectric approach allows for spatial and time dispersions of...

  • Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-�m spectral range. Aidaraliev, M.; Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus�, N. M.; Talalakin, G. N. // Semiconductors;Feb99, Vol. 33 Issue 2, p200 

    It is shown that type-I or type-II heterojunctions can be formed at heterojunction boundaries, depending on the composition of the active region and/or bounding layers. This is governed by differences in the mechanisms of radiative recombination, the temperature dependence of the radiation...

  • On the Theory of Anomalous Photovoltage in Multilayer Structures with p�n Junctions. Agarev, V. N.; Stepanova, N. A. // Semiconductors;Apr2000, Vol. 34 Issue 4, p438 

    Steady- and nonsteady-state photovoltages appearing in a multilayer structure with p-n junctions under the conditions of nonuniform illumination are considered for an arbitrary ratio between the diffusion length L and the sizes d of the p- and n-regions. It is shown that, for d � L, the...

  • Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer. Tuy, T. Q.; Mojzes, I. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1652 

    Recently experimental results for a thin interface metal layer to control the Schottky barrier height of Ti/Pt/n-GaAs and Pt/Ti/n-GaAs contacts were presented [X. Wu, M. T. Schmidt, and E. S. Yang, Appl. Phys. Lett. 54, 268 (1989)]. In the present letter a possible explanation of the variation...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics