TITLE

Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor

AUTHOR(S)
Lin, Y.S.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5545
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This investigation proposes an InP/InGaAs composite-collector double heterojunction bipolar transistor (CC-DHBT) grown by metalorganic chemical vapor deposition. The improved structure exhibits the advantages of no knee-shaped characteristics, no switching effect, low output conductance, a high two-terminal base–collector breakdown voltage (BV) that exceeds 20 V, and high three-terminal breakdown voltages (BV[sub CEO]>15 V, BV[sub CBO]>20 V). The current gain is over unity at ultralow collector current density of 10[sup -4] A/cm[sup 2]. These characteristics are attributed to the optimized collector design. Furthermore, this study elucidates complex breakdown mechanisms in the CC-DHBTs. © 2003 American Institute of Physics.
ACCESSION #
11753244

 

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