Slip systems and misfit dislocations in InGaN epilayers

Srinivasan, S.; Geng, L.; Liu, R.; Ponce, F.A.; Narukawa, Y.; Tanaka, S.
December 2003
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5187
Academic Journal
We have studied the microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgrown GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislocations, slip occurs with the formation of periodic arrays of misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces. This letter presents a comprehensive analysis of slip systems in the wurtzite structure and considers the role of threading dislocations in strain relaxation in InGaN alloys. © 2003 American Institute of Physics.


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