Generation of ultrahigh pressure using single-crystal chemical-vapor-deposition diamond anvils

Mao, Wendy L.; Mao, Ho-kwang; Chih-shiue Yan; Shu, Jinfu; Jingzhu Hu; Hemley, Russell J.
December 2003
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5190
Academic Journal
Two experiments were conducted compressing Ta, Re, Pt, and an Fe-Si alloy to ultrahigh pressures using single-crystal chemical vapor deposition (CVD) and natural diamonds. In situ energy-dispersive and angle-dispersive x-ray diffraction were used to determine pressure from known equations of state. We demonstrate that CVD diamonds can be used in diamond anvil cells to reach pressures of nearly 200 GPa. © 2003 American Institute of Physics.


Related Articles

  • Growth and high pressure studies of zirconium sulphoselenide single crystals. Patel, K. R.; Vaidya, R. D.; Dave, M. S.; Patel, S. G. // Pramana: Journal of Physics;Nov2009, Vol. 73 Issue 5, p945 

    Transition metal trichalcogenides are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transition under pressure. In this paper authors reported the details about synthesis and characterization of...

  • X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on.... Schaller, E.; Kuttel, O.M. // Applied Physics Letters;9/11/1995, Vol. 67 Issue 11, p1533 

    Analyzes the use of x-ray photoelectron diffraction in the chemical vapor deposition (CVD) of diamond films in silicon. Application of microwave plasma CVD; Overview of the procedural technique used in photoelectron diffraction; Analysis of the similar features exhibited by diffractograms of...

  • Strain and crystal defects in thin AlN/GaN structures on (0001) SiC. Faleev, N.; Levin, I. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p113529 

    High-resolution x-ray diffraction was used to compare strain relaxation and defect populations in thin GaN/AlN heterostructures (total thickness ≈480 nm) grown on (0001) SiC using metalorganic chemical vapor deposition (MOCVD) and hydride vapor epitaxy (HVPE) techniques. The results of...

  • An economic CVD technique for pure SnO thin films deposition: Temperature effects. MALEKI, M; ROZATI, S // Bulletin of Materials Science;Apr2013, Vol. 36 Issue 2, p217 

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and...

  • Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111). Liu, W.; Zhu, J. J.; Jiang, D. S.; Yang, H.; Wang, J. F. // Applied Physics Letters;1/1/2007, Vol. 90 Issue 1, p011914 

    The strain evolution in metal organic chemical vapor deposition growth of GaN on Si (111) substrate with an AlN interlayer is studied. During the growth of GaN film on AlN interlayer, the growth stress changes from compression to tension. The study shows that the density of V trenches in the AlN...

  • Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials. MALLIK, AWADESH; DANDAPAT, NANADADULAL; GHOSH, PRAJIT; GANGULY, UTPAL; JANA, SUKHENDU; DAS, SAYAN; GUHA, KAUSTAV; REBELLO, GARFIELD; LAHIRI, SAMIR; DATTA, SOMESWAR // Bulletin of Materials Science;Apr2013, Vol. 36 Issue 2, p193 

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman...

  • Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices. Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J. // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p122109 

    In this study, 4 × 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good...

  • Properties of Boron-Doped Thin Films of Polycrystalline Silicon. Merabet, Souad // AIP Conference Proceedings;Dec2013, Vol. 1569 Issue 1, p314 

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×1020cm-3 has been studied. Their properties are analyzed using electrical and structural characterization means by...

  • Method of fabricating a free-standing diamond single crystal using growth from the vapor phase. Posthill, J. B.; Malta, D. P.; Humphreys, T. P.; Hudson, G. C.; Thomas, R. E.; Rudder, R. A.; Markunas, R. J. // Journal of Applied Physics;3/1/1996, Vol. 79 Issue 5, p2722 

    Provides information on a study that described the results of a diamond epilayer liftoff from a diamond single crystal in the context of an optimized diamond homeoepitaxial deposition based on plasma-enhanced chemical vapor deposition using water/alcohol mixtures. Experimental procedures;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics