TITLE

Growth of quantum fortress structures in Si[sub 1-x]Ge[sub x]/Si via combinatorial deposition

AUTHOR(S)
Vandervelde, Thomas E.; Kumar, Piyush; Kobayashi, Takeshi; Gray, Jennifer L.; Tim Pernell, Jennifer L.; Floro, Jerrold A.; Hull, Robert; Bean, John C.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5205
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This study details the evolution of morphologies in the Si[sub 1-x]Ge[sub x]/Si system, under kinetically controlled conditions of 550 °C growth temperature and 1 Å/s growth rate. We find that, with increasing film thickness and Ge fraction, a series of three-dimensional structures develop, starting from pits, and leading to quantum fortresses and ridges. The quantum fortress structures are of special significance because of their potential application in quantum cellular automata. We establish approximate boundaries in the parameter space of film thickness and Ge fraction, in which these structures form. We present a simple model, based on kinetics and strain, to explain the observed structures. © 2003 American Institute of Physics.
ACCESSION #
11713214

 

Related Articles

  • Single-crystal germanium grown on (1102) sapphire by molecular beam epitaxy. Godbey, D. J.; Qadri, S. B.; Twigg, M. E.; Richmond, E. D. // Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2449 

    Crystalline germanium films have been successfully grown on the (1102) sapphire surface using molecular beam epitaxy. Growth at temperatures above 700 °C and after preannealing the sapphire substrates above 1100 °C resulted in germanium films with a (110) orientation. A 500 nm germanium...

  • Stress reduction and doping efficiency in B- and Ge-doped silicon molecular beam epitaxy films. Hirayama, Hiroyuki; Tatsumi, Toru; Aizaki, Naoaki // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1335 

    Lattice defects in boron highly doped silicon molecular beam epitaxy films (B:2×1020 cm-3) were reduced by a simultaneous doping of germanium and boron. The defect reduction mechanism was investigated with surface defect observation, x-ray diffraction, and Raman spectroscopy. The growth rate...

  • Strain relief of metastable GeSi layers on Si(100). Bai, G.; Nicolet, M.-A.; Chern, C. H.; Wang, K. L. // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4475 

    Presents information on a study which investigated the growth of highly metastable pseudomorphic Ge[sun 0.3]Si[sub 0.7] layers on silicon (100) by molecular-beam epitaxy.

  • Ge growth on Si using atomic hydrogen as a surfactant. Sakai, Akira; Tatsumi, Toru // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p52 

    Examines the growth of germanium (Ge) thin films on silicon substrates using atomic hydrogen (H) as a surfactant. Suppression of Ge island formation; Alteration of film growth in molecular beam epitaxy; Use of reflection high-energy electron diffraction to monitor surface structure growth;...

  • Epitaxial growth and characterization of Ge1-xCx alloys on Si(100). Krishnamurthy, M.; Drucker, J. S.; Challa, A. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7070 

    Presents a study on the initial stages of molecular beam epitaxial growth of Ge[sub1-x]C[subx] on Si(100) using both in situ surface analytical techniques and ex situ electron microscopy. Cocentrations of the films studied; Details on silicon-germanium alloys; Experimental technique; Results;...

  • Growth of HgCdTe and CdTe(331)B on germanium substrate by molecular beam epitaxy. Zanatta, J.P.; Duvaut, P. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2984 

    Examines the growth of mercury cadmium telluride and cadmium telluride (CdTe)(331)boron films on germanium (Ge) substrate by molecular beam epitaxy. Reason for the selection of Ge as substrate; Characteristics of the grown samples; Use of transmission electron microscopy; Display of the misfit...

  • Strain relaxation of Si/Ge multilayers: Coherent islands formation and their evolution as a function of the strain. Carlino, E.; Giannini, C.; Gerardi, C.; Tapfer, L.; Mäder, K. A.; von Känel, H. // Journal of Applied Physics;2/1/1996, Vol. 79 Issue 3, p1441 

    Presents information on a study which analyzed silicon/germanium multilayers grown by molecular beam epitaxy. Experimental procedure; Results; Discussion.

  • Determination Of Quantum Dots Structural Parameters By XAFS Spectroscopy. Erenburg, Simon; Bausk, Nikolai; Nikiforov, Aleksandr; Yakimov, Andrei; Dvurechenskii, Anatolii; Kulipanov, Gennadii; Nikitenko, Sergei // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p585 

    Surface sensitive XAFS (X-ray absorption fine structure) measurements based on total electron yield and fluorescence yield detection modes have been performed for pseudomorphous Ge films and clusters deposited on Si(001) and Si(111) substrate via molecular beam epitaxy (MBE). Deposited Ge...

  • Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si[sub 1 � ][sub x]Ge[sub x] Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources. Orlov, L. K.; Ivina, N. L. // Semiconductors;Feb2002, Vol. 36 Issue 2, p191 

    The coefficients of segregation of germanium atoms were measured for the Si[sub 1-x]Ge[sub x] system grown by molecular-beam epitaxy with combined Si-GeH[sub 4] sources under the conditions of efficient filling of surface bonds by the products of the decomposition of hydrides. In their turn,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics