4H-polytype AlN grown on 4H-SiC(1120) substrate by polytype replication

Onojima, N.; Suda, J.; Kimoto, T.; Matsunami, H.
December 2003
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5208
Academic Journal
4H-polytype AlN has been grown on a 4H-SiC substrate with the (1120) face via plasma-assisted molecular-beam epitaxy. The microscopic structure of the AlN/4H-SiC interface was examined using high-resolution transmission electron microscopy, and the polytype replication of the 4H structure from the 4H-SiC(1120) substrate was evidently confirmed. The x-ray rocking curve of (1120) diffraction for the single crystalline 4H-AlN epilayer exhibited a very small linewidth of 90 arc sec, suggesting noticeably small tilting around the [1120] direction. The excellent crystalline quality is probably owing to the polytype matching between the 4H-AlN epilayer and the 4H-SiC substrate, which resulted in remarkable reduction of defects at the interface. © 2003 American Institute of Physics.


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