TITLE

Interface formation and defect structures in epitaxial La[sub 2]Zr[sub 2]O[sub 7] thin films on (111) Si

AUTHOR(S)
Seo, J.W.; Fompeyrine, J.; Guiller, A.; Norga, G.; Marchiori, C.; Siegwart, H.; Locquet, J.-P.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5211
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the growth of epitaxial La[sub 2]Zr[sub 2]O[sub 7] thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during the deposition process, epitaxial growth of La[sub 2]Zr[sub 2]O[sub 7] was obtained. A detailed study by means of transmission electron microscopy reveals two types of structures (pyrochlore and fluorite) with the same average chemical composition but strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure seems to prevent excess oxygen diffusion and interfacial SiO[sub 2] formation. © 2003 American Institute of Physics.
ACCESSION #
11713212

 

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