Bandgap states in transition-metal (Sc, Y, Zr, and Nb)-doped Al[sub 2]O[sub 3]

Jung, Ranju; Jae-Cheol Lee, Ranju; Ye-Won So, Ranju; Tae-Won Noh, Ranju; Oh, S.-J.; Jong-Cheol Lee; Hyun-Joon Shin
December 2003
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5226
Academic Journal
We have investigated the electronic structure of transition-metal (TM=Sc, Y, Zr, and Nb)-doped Al[sub 2]O[sub 3] by x-ray photoemission spectroscopy (XPS) and x-ray absorption spectroscopy (XAS). In valence bands of these TM-doped Al[sub 2]O[sub 3] measured by XPS, the highest occupied levels and the shapes of valence bands are almost unchanged from the pure alumina. On the other hand, XAS spectra obtained at the oxygen K-edge show that Nb- and Zr-doped Al[sub 2]O[sub 3] show localized d states in the bandgap below the conduction band minimum, while Y- and Sc-doped Al[sub 2]O[sub 3] have d states inside the conduction band of the original Al[sub 2]O[sub 3]. This implies that Y- and Sc-doped Al[sub 2]O[sub 3] will show little bandgap degradation and maintain the same band offset as silica at the Si interface, and can serve as promising candidates for an alternative gate oxide. © 2003 American Institute of Physics.


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