TITLE

Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al[sub 2]O[sub 3]/SiO[sub x]N[sub y]/Si(100) gate stacks

AUTHOR(S)
Xiong, H.D.; Fleetwood, D.M.; Felix, J.A.; Gusev, E.P.; D'Emic, C.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5232
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-frequency noise and irradiation response are studied for n-channel metal-oxide-semiconductor field-effect transistors with Al[sub 2]O[sub 3]/SiO[sub x]N[sub y]/Si(100) gate stacks. Radiation-induced threshold-voltage shifts and low-frequency noise increase with dose and decrease with postirradiation annealing. The border trap density in the gate dielectric inferred from the noise measurements is significantly higher than that typically observed in thermal SiO[sub 2]. Similarly, the effective radiation-induced-hole trapping efficiency in Al[sub 2]O[sub 3] gate dielectrics is significantly higher than for SiO[sub 2] gate dielectrics of comparable thickness. The low-frequency noise in these high-κ devices can be described well by a number fluctuation model. © 2003 American Institute of Physics.
ACCESSION #
11713205

 

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