TITLE

High frequency capacitance–voltage characterization of Al[sub 2]O[sub 3]/ZrO[sub 2]/Al[sub 2]O[sub 3] in fully depleted silicon-on-insulator metal–oxide–semiconductor capacitors

AUTHOR(S)
Zhang, N.L.; Song, Z.T.; Shen, Q.W.; Wu, Y.J.; Liu, Q.B.; Lin, C.L.; Duo, X.Z.; Zheng, L.R.; Ding, Y.F.; Zhu, Z.Q.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5238
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al[sub 2]O[sub 3]/ZrO[sub 2]/Al[sub 2]O[sub 3] gate stacks were prepared on ultrathin silicon-on-insulator (SOI) by ultrahigh vacuum electron-beam evaporation and postannealed in N[sub 2] at 450 °C for 30 min. A three clear nanolaminate layered structure of Al[sub 2]O[sub 3] (2.1 nm)/ZrO[sub 2] (3.5 nm)/Al[sub 2]O[sub 3] (2.3 nm) was observed with high-resolution cross-sectional transmission electron microscopy. High frequency capacitance voltage (C–V) characteristics of the fully depleted (FD) SOI metal–oxide–semiconductor (MOS) capacitor at 1 and 5 MHz were studied. It is the minority carriers that determine the high frequency C–V properties, which are opposite to the case of bulk MOS capacitors. And the series resistance of the SOI is the determinant factor of the high frequency characteristics of the FD SOI MOS capacitors. © 2003 American Institute of Physics.
ACCESSION #
11713203

 

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