Magnetic tunnel junctions with ZnSe barriers

Xin Jiang; Panchula, Alex F.; Parkin, Stuart S.P.
December 2003
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5244
Academic Journal
Magnetic tunnel junctions with ZnSe barriers were fabricated with a combination of magnetron sputtering, ion beam sputtering, and effusion cell evaporation. Tunneling magnetoresistance values of ∼10% are observed at room temperature. The temperature and barrier thickness dependences of the junction resistance and tunneling magnetoresistance are consistent with a predominant direct tunneling mechanism when the barrier thickness is less than ∼10 nm thick. © 2003 American Institute of Physics.


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