TITLE

Electrical transport in boron nanowires

AUTHOR(S)
Wang, Dawei; Lu, Jia G.; Otten, Carolyn Jones; Buhro, William E.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5280
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical transport is studied in crystalline boron nanowires, using Ni and Ti as the contact electrodes, in which Ni forms ohmic contact and Ti forms Schottky-barrier junction. Three-terminal electrical measurements demonstrate p-type semiconductor behavior with estimated carrier mobility of 10[sup -3] cm[sup 2]/V s. The conductivities in annealed devices are on the order of 10[sup -2] (Ω cm)[sup -1]. At 4.2 K, the I-V shows low conductance at low bias voltage, and increases exponentially beyond a threshold electric field close to 10[sup 5] V/cm. We attribute this behavior to electric-field-induced impact ionization. © 2003 American Institute of Physics.
ACCESSION #
11713189

 

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