TITLE

Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

AUTHOR(S)
Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5283
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 °C by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. © 2003 American Institute of Physics.
ACCESSION #
11713188

 

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