Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.
December 2003
Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5283
Academic Journal
Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 °C by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. © 2003 American Institute of Physics.


Related Articles

  • A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition. Zhou, W.; Tang, W.; Lau, K. M. // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p221917 

    An 'atomic chain-like' array distinct from interfacial misfit dislocation arrays was characterized at the interface of GaSb/GaAs grown by metalorganic chemical vapor deposition. Using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and x-ray energy-dispersive...

  • Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition. Yeoh, T. S.; Liu, C. P.; Swint, R. B.; Huber, A. E.; Roh, S. D.; Woo, C. Y.; Lee, K. E.; Coleman, J. J. // Applied Physics Letters;7/9/2001, Vol. 79 Issue 2 

    Fully coherent InAs quantum dots and InAs quantum dots grown on self-organized two-dimensional (2D) islands by atmospheric pressure metalorganic chemical vapor deposition are investigated. The significantly lower critical thickness window of between 1 and 2.0 monolayers for fully coherent dots...

  • Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition. X. B. Zhang, M. Riad; Heller, R. D.; Noh, M. S.; Dupuis, R. D.; Walter, G.; Holoyak, N. // Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1349 

    InP self-assembled quantum dots (QDs) were deposited on lattice-matched In[sub 0.5](Al[sub x]Ga[sub 1-x])[sub 0.5]P matrices grown on (001) GaAs substrates by using metalorganic chemical vapor deposition. We found that the Al concentration in the matrix has a great influence on the size of the...

  • Effects of temperature oscillations on the growth of carbon nanotubes by chemical vapor deposition. Sun, L. F.; Xie, S. S.; Mao, J. M.; Pan, Z. W.; Chang, B. H.; Zhou, W. Y.; Wang, G.; Qian, L. X. // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    We have grown carbon nanotubes at oscillatory growth temperature by chemical vapor deposition. The high-resolution transmission electron microscopy (HRTEM) images show that they contain a number of incomplete carbon layers both on the outer and inner periphery and dislocations in the middle part...

  • Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy. Lozano, J. G.; Sánchez, A. M.; García, R.; González, D.; Araújo, D.; Ruffenach, S.; Briot, O. // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p263104 

    InN quantum dots (QDs) on GaN (0001) grown by metalorganic vapor phase epitaxy onto a sapphire substrate were studied by transmission electron microscopy (TEM). We found that the nucleation of InN QDs on GaN is directly related to the presence of threading dislocations (TDs) in the center of the...

  • Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters. Tatebayashi, J.; Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p263101 

    We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the...

  • Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 μm applications: Growth, structural, and optical properties. Michon, A.; Hostein, R.; Patriarche, G.; Gogneau, N.; Beaudoin, G.; Beveratos, A.; Robert-Philip, I.; Laurent, S.; Sauvage, S.; Boucaud, P.; Sagnes, I. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p043504 

    This contribution reports the metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots with a voluntary V-alloying obtained owing to an additional phosphine flux during InAs quantum dot growth. The quantum dots were studied by photoluminescence and transmission electron microscopy. We...

  • Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers. Cao, Yunqing; Lu, Peng; Zhang, Xiaowei; Xu, Jun; Xu, Ling; Chen, Kunji // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm....

  • Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy. Chen, J. Y.; Chi, G. C.; Huang, P. J.; Chen, M. Y.; Hung, S. C.; Nien, C. H.; Chen, M. C.; Lan, S. M.; Pong, B. J.; Pan, C. J.; Tun, C. J.; Ren, F.; Chang, C. Y.; Pearton, S. J. // Applied Physics Letters;4/21/2008, Vol. 92 Issue 16, p162103 

    InN quantum dots (QDs) were grown over 2 in. Si (1 1 1) wafers with a 300 nm thick AlN buffer layer by atmospheric-pressure metal organic vapor phase epitaxy. When the growth temperature increased from 450 to 625 °C, the corresponding InN QDs height increased from 16 to 108 nm while the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics