TITLE

Internal quantum efficiency of highly-efficient In[sub x]Ga[sub 1-x]N-based near-ultraviolet light-emitting diodes

AUTHOR(S)
Watanabe, Satoshi; Yamada, Norihide; Nagashima, Masakazu; Ueki, Yusuke; Sasaki, Chiharu; Yamada, Yoichi; Taguchi, Tsunemasa; Tadatomo, Kazuyuki; Okagawa, Hiroaki; Kudo, Hiromitsu
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE at 300 K was measured to be as high as 63%. At the injected carrier density, which corresponds to 20 mA current injection, IQE and light extraction efficiency were estimated to be about 54% and 80%, respectively. © 2003 American Institute of Physics.
ACCESSION #
11649689

 

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