Island chain formation during liquid phase epitaxy of SiGe on silicon

Hanke, M.; Raidt, H.; Köhler, R.; Wawra, H.
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4927
Academic Journal
We report on the evolution of lateral ordering of SiGe nanoscale islands on Si(001), which have been grown by means of liquid phase epitaxy in the Stranski-Krastanow mode. Applying post-growth atomic force microscopy on different sample areas covered by different island densities, we could trace ex-situ the development of extended island chains along the <100>-directions. The linear alignment happens by further nucleation of islands at the end of an already existing formation. Those direct observations will be discussed in terms of finite element strain energy calculations around various island configurations. © 2003 American Institute of Physics.


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