Ge[sub 1-x]Sn[sub x] alloys pseudomorphically grown on Ge(001)

de Guevara, H. Pérez Ladrón; Rodríguez, A.G.; Navarro-Contreras, H.; Vidal, M.A.
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4942
Academic Journal
Ge[sub 1-x]Sn[sub x] alloys were grown on Ge(001) substrates in a conventional rf sputtering system. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. The Sn concentration was determined assuming Vegard’s law for the alloy lattice parameter. At low concentrations, we observed that Ge[sub 1-x]Sn[sub x] layers have pseudomorphic characteristics for layer thickness from 320 to 680 nm. These characteristics of Ge[sub 1-x]Sn[sub x] layers agree with the People and Bean critical thickness model. This structural study opens the possibility of growing dislocation-free Ge[sub 1-x]Sn[sub x] alloys below the critical thickness. © 2003 American Institute of Physics.


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