Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

Deenapanray, Prakash N.K.; Petravić, M.; Kim, K.-J.; Kim, B.; Li, G.
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4948
Academic Journal
We have investigated compositional changes on GaN surfaces under Ar-ion bombardment using synchrotron-based high-resolution x-ray photoemission (PES) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemission spectra around N 1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen interstitials, which we have analyzed in more details by x-ray absorption measurements at N K edge. We have demonstrated that PES and NEXAFS provide a powerful combination for studying the compositional changes on GaN surfaces. A mechanism for the relocation and loss of nitrogen during ion bombardment in agreement with some recent experimental and theoretical studies of defect formation in GaN has been proposed. © 2003 American Institute of Physics.


Related Articles

  • Core-level photoemission and near-edge x-ray absorption fine-structure studies of GaN surface under low-energy ion bombardment. Petravic, Mladen; Deenapanray, Prakash N.K.; Coleman, Victoria A.; Ki-Jeong Kim; Bongsoo Kim; Gang Li // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5487 

    We have investigated compositional changes on GaN surfaces under low-energy Ar ion bombardment using synchrotron-based high-resolution core-level photoemission measurements and near-edge x-ray absorption fine-structure (NEXAFS) spectroscopy. The low-energy ion bombardment of GaN produces a...

  • Point defects in gallium nitride: X-ray absorption measurements and multiple scattering simulations. Peter, Robert; Segota, Doris; Petravic, Mladen // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p172107 

    We have studied the formation of nitrogen-related point defects in gallium nitride (GaN) using near-edge x-ray absorption fine-structure (NEXAFS) spectroscopy and ab initio FEFF calculations. The presence of several point defects, created within the GaN matrix by low-energy ion-bombardment, has...

  • Application of near-edge x-ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN. Katsikini, M.; Paloura, E. C.; Moustakas, T. D. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4206 

    Cubic and hexagonal GaN thin films are studied using the angular dependence of the near-edge x-ray absorption fine structure (NEXAFS) spectra recorded at the N–K edge. It is shown that the energy positions of the NEXAFS resonances are characteristic of the cubic and hexagonal structures...

  • Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy. Chiou, J. W.; Jan, J. C.; Tsai, H. M.; Pong, W. F.; Tsai, M.-H.; Hong, I.-H.; Klauser, R.; Lee, J. F.; Hsu, C. W.; Lin, H. M.; Chen, C. C.; Shen, C. H.; Chen, L. C.; Chen, K. H. // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3949 

    X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger)...

  • Structure of S-passivated InP(100)-(1X1) surface. Lu, Z.H.; Graham, M.J. // Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2773 

    Determines the structure of the sulfur (S)-passivated indium phosphide (InP)(100)-(1X1) surface using x-ray absorption near-edge structure (XANES). Employment of photon electric polarization-dependent XANES analysis; Description of the formed bridge bond; Proximity of the S atomic position.

  • Study of Flux Ratio of C60 to Ar Cluster Ion for Hard DLC Film deposition. Miyauchi, K.; Kitagawa, T.; Toyoda, N.; Kanda, K.; Matsui, S.; Yamada, I. // AIP Conference Proceedings;2003, Vol. 680 Issue 1, p719 

    To study the influence of the flux ratio of C60 molecule to Ar cluster ion on DLC film characteristics, DLC films deposited under various flux ratios were characterized with Raman spectrometry and Near Edge X-ray Absorption Fine Structure (NEXAFS). From results of these measurements, hard DLC...

  • Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering. Abrasonis, G.; Gago, R.; Jimenez, I.; Kreissig, U.; Kolitsch, A.; Möller, W. // Journal of Applied Physics;10/1/2005, Vol. 98 Issue 7, p074907 

    Carbon (C) and carbon nitride (CNx) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 °C) and Ar/N2 sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance...

  • X-ray spectra and electronic band structure of nitrogen in Al x Ga1− x N solid solid solutions. Ilyasov, V. V.; Zhdanova, T. P.; Nikiforov, I. Ya. // Physics of the Solid State;Aug2007, Vol. 49 Issue 8, p1435 

    The electronic energy structure of the valence band and the x-ray absorption near edge structure (XANES) region of nitrogen in Al x Ga1− x N solid solutions and binary crystals of gallium nitride GaN and aluminum nitride AlN are calculated using the local coherent potential method and the...

  • Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion. Hwang, J. I.; Osafune, Y.; Kobayashi, M.; Ebata, K.; Ooki, Y.; Ishida, Y.; Fujimori, A.; Takeda, Y.; Okane, T.; Saitoh, Y.; Kobayashi, K.; Tanaka, A. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103709 

    We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep (∼70 Å)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics