TITLE

Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

AUTHOR(S)
Deenapanray, Prakash N.K.; Petravić, M.; Kim, K.-J.; Kim, B.; Li, G.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4948
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated compositional changes on GaN surfaces under Ar-ion bombardment using synchrotron-based high-resolution x-ray photoemission (PES) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemission spectra around N 1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen interstitials, which we have analyzed in more details by x-ray absorption measurements at N K edge. We have demonstrated that PES and NEXAFS provide a powerful combination for studying the compositional changes on GaN surfaces. A mechanism for the relocation and loss of nitrogen during ion bombardment in agreement with some recent experimental and theoretical studies of defect formation in GaN has been proposed. © 2003 American Institute of Physics.
ACCESSION #
11649675

 

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