TITLE

Activation kinetics of implanted Si[sup +] in GaN and application to fabricating lateral Schottky diodes

AUTHOR(S)
Irokawa, Y.; Jihyun Kim, Y.; Ren, F.; Baik, K.H.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4987
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical activation characteristics of implanted Si[sup +] in GaN were investigated as a function of annealing temperature (1000 °C–1200 °C). The maximum activation percentage for an ion dose of 2.5×10[sup 14] cm[sup -2] was ∼30% with an apparent activation energy for electrical activation of 1.65±0.15 eV obtained from the temperature dependence of the saturated carrier density. Lateral Schottky diodes fabricated on this material showed forward ideality factors of ∼2 and a temperature coefficient of -0.15 V K-1 for their reverse breakdown voltage. These results show the feasibility of creating n[sup +] tubs in p-GaN such as are needed as sources of minority carriers to achieve inversion in GaN metal-oxide-semiconductor field-effect transistors. © 2003 American Institute of Physics.
ACCESSION #
11649662

 

Related Articles

  • Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes. Dimitriadis, C. A. // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p143 

    The effects of rapid thermal annealing (RTA) on the material properties and on the performance of Pt Schottky barriers on Si are investigated and compared with the effects of corresponding furnace annealings. For fabrication of platinum silicide-silicon Schottky diodes, furnace annealing...

  • The effect of Ar+ ion implantation on the electrical characteristics of Cr/P-Si Schottky diodes. Malherbe, J. B.; de Witt, B.; Berning, G. L. P. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2757 

    Examines the effect of argon[sup+] ion implantation on the electrical characteristics of chromium/p-type silicon Schottky diodes. Significance of high-energy ion implantation of metal-silicon systems; Characteristics for some typical diodes before and after implantation at the indicated dose...

  • Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni 6H-SiC barrier height. Roccaforte, F.; Via, F.La; Raineri, V.; Musumeci, P.; Calcagno, L.; ConDorelli, G.G. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 6, p827 

    In this work, the effects of surface preparation and thermal annealing on the Ni/6H-SiC Schottky barrier height were studied by monitoring the forward I-V characteristics of Schottky diodes. The ideality factor n and the barrier height B were found to be strongly dependent on the impurity...

  • Evolution of the electrical characteristics of Pt/3C-SiC Schottky contacts upon thermal annealing. Eriksson, Jens; Roccaforte, Fabrizio; Reshanov, Sergey; Giannazzo, Filippo; Lo Nigro, Raffaella; Raineri, Vito // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p75 

    In this paper, the evolution of the electrical characteristics of Pt Schottky contacts to cubic silicon carbide (3C-SiC) upon annealing was investigated. The Pt/3C-SiC system was structurally and electrically characterized upon annealing in the temperature range 500° C-900° C. X-ray...

  • Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes. Caldwell, J. D.; Stahlbush, R. E.; Imhoff, E. A.; Hobart, K. D.; Tadjer, M. J.; Zhang, Q.; Agarwal, A. // Journal of Applied Physics;Aug2009, Vol. 106 Issue 4, p044504 

    The increase in the forward voltage drop observed in 4H-SiC bipolar devices due to recombination-induced stacking fault (SF) creation and expansion has been widely discussed in the literature. It was long believed that the deleterious effect of these defects was limited to bipolar devices....

  • The fabrication of 4H-SiC Floating Junction SBDs(FJ_SBDs). Yuan Hao; Tang Xiaoyan; Zhang Yimen; Zhang Yuming; Lv Hongliang; Wang Yuehu; Zhou Yufei; Song Qingwen // Materials Science Forum;2014, Vol. 778-780, p812 

    Based on the theoretical analysis and the simulation results of the ion implantation process and the floating Junction structure, a 4H-SiC SBD with floating junction (FJ_SBD) is fabricated. Compared with the on-resistance 5.13 mΩ·cm² of conventional SBD fabricated at the same time, the...

  • Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers. Kalinina, E.V.; Kholuyanov, G.F.; Davydov, D.V.; Strel'chuk, A.M.; Hallen, A.; Konstantinov, A.O.; Luchinin, V.V.; Nikiforov, A. Yu. // Semiconductors;Oct2003, Vol. 37 Issue 10, p1229 

    The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p[sup +]–n–n[sup +] diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing...

  • Effect of high temperature processing of Si/SiO[sub 2]/Si structures on their response to x-ray.... Paillet, P.; Herve, D. // Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2088 

    Examines the effect of high temperature processing of silicon (Si)/silica (SiO[sub 2])/Si structures on their response to x-ray radiation. Introduction of electron traps by temperature annealing of structures; Effects of temperature annealing on oxygen-vacancy complexes; Use of high temperature...

  • Damage nucleation and annealing in MeV ion-implanted Si. Holland, O. W.; El-Ghor, M. K.; White, C. W. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1282 

    The damage produced in Si by high-energy MeV ions and its low-temperature annealing behavior are discussed. The damage morphology clearly shows that there are distinct regions in which different damage nucleation and growth mechanisms are dominant. A model is proposed to account for the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics