Activation kinetics of implanted Si[sup +] in GaN and application to fabricating lateral Schottky diodes

Irokawa, Y.; Jihyun Kim, Y.; Ren, F.; Baik, K.H.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4987
Academic Journal
The electrical activation characteristics of implanted Si[sup +] in GaN were investigated as a function of annealing temperature (1000 °C–1200 °C). The maximum activation percentage for an ion dose of 2.5×10[sup 14] cm[sup -2] was ∼30% with an apparent activation energy for electrical activation of 1.65±0.15 eV obtained from the temperature dependence of the saturated carrier density. Lateral Schottky diodes fabricated on this material showed forward ideality factors of ∼2 and a temperature coefficient of -0.15 V K-1 for their reverse breakdown voltage. These results show the feasibility of creating n[sup +] tubs in p-GaN such as are needed as sources of minority carriers to achieve inversion in GaN metal-oxide-semiconductor field-effect transistors. © 2003 American Institute of Physics.


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