TITLE

Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

AUTHOR(S)
June-O Song, K.; Dong-Seok Leem; Kwak, J.S.; Nam, O.H.; Park, Y.; Tae-Yeon Seong
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4990
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated a Zn–Ni solid solution/Ag scheme for use in producing high-quality ohmic contacts for flip-chip light-emitting diodes (LEDs). The as-deposited contact shows nonlinear I–V characteristics. However, oxidizing the contacts at temperatures of 350–550 °C for 1 min in air ambient results in linear I–V behaviors, yielding specific contact resistances of 10[sup -4]–10[sup -5] Ω cm[sup 2]. In addition, LEDs are fabricated with the oxidized Zn–Ni solid solution/Ag contacts and Ag single contacts. The typical I–V characteristics of the LEDs with the annealed Zn–Ni solid solution (2.5 nm)/Ag (200 nm) p-type contact layers reveal a forward-bias voltage of 3.25 V at an injection current of 20 mA, which is much better than that of the LEDs with the Ag (200 nm) contact layers. © 2003 American Institute of Physics.
ACCESSION #
11649661

 

Related Articles

  • ITO/Ti/Au Ohmic contacts on n-type ZnO. Kang, B. S.; Chen, J. J.; Ren, F.; Li, Y.; Kim, H.-S.; Norton, D. P.; Pearton, S. J. // Applied Physics Letters;5/1/2006, Vol. 88 Issue 18, p182101 

    The specific contact resistivity and chemical intermixing of indium-tin-oxide (ITO)/Ti/Au Ohmic contacts on n-type bulk ZnO substrates are reported as a function of annealing temperature up to 450 °C. A minimum contact resistivity of 4.6×10-6 Ω cm2 was obtained at 50 °C and the...

  • Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes. Jeon, Joon-Woo; Park, Seong-Han; Jung, Se-Yeon; Lee, Sang Youl; Moon, Jihyung; Song, June-O; Seong, Tae-Yeon // Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092103 

    We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al–Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al–Ga solid solution layer is...

  • Ohmic hole injection in poly(9,9-dioctylfluorene) polymer light-emitting diodes. Poplavskyy, D.; Nelson, J.; Bradley, D. D. C. // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p707 

    Here we report the observation of ohmic hole injection from a conducting polymer anode into poly(9,9-dioctylfluorene) in a polymer light-emitting diode structure. Although initially nonohmic, the contact can be made locally ohmic by electrically conditioning the device at voltages higher than...

  • Ohmic and degradation mechanisms of Ag contacts on p-type GaN. Song, June-O; Kwak, Joon Seop; Park, Yongjo; Seong, Tae-Yeon // Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062104 

    The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47×10-4 Ω cm2 and produces reflectance of ∼84% when annealed at 330 °C for 1 mm in...

  • Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN. Ho Won Jang; Jong-Lam Lee // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182108 

    Abnormal behavior of contact resistance with annealing in Ohmic contacts to laser-irradiated n-GaN is investigated. Ti/Al contacts on as-grown n-GaN shows no change in contact resistivity with annealing at the temperature range of 100–400 °C. However, the annealing results in the...

  • Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector. Lobo, N.; Rodriguez, H.; Knauer, A.; Hoppe, M.; Einfeldt, S.; Vogt, P.; Weyers, M.; Kneissl, M. // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p081109 

    We report on a nanopixel contact design for nitride-based ultraviolet light-emitting diodes to enhance light extraction. The structure consists of arrays of Pd ohmic contact pixels and an overlying Al reflector layer. Based on this design a twofold increase in the light output, compared to large...

  • Marked improvement in electroluminescence characteristics of organic light-emitting diodes using an ultrathin hole-injection layer of molybdenum oxide. Matsushima, Toshinori; Jin, Guang-He; Murata, Hideyuki // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p054501 

    We show that the performance of organic light-emitting diodes (OLEDs) is markedly improved by optimizing the thickness of a hole-injection layer (HIL) of molybdenum oxide (MoO3) inserted between indium tin oxide and...

  • Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts. Campbell, Alasdair J.; Bradley, Donal D. C.; Bradley, Donal D.C.; Antoniadis, Homer; Inbasekaran, Mike; Wu, Weishi W.; Woo, Ed P. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    We report detailed measurements on diode structures containing the electroluminescent polyfluorene copolymer poly(9,9-dioctylfluorene-co-bis-N,N[sup ′]-(4-methoxyphenyl)-bis-N,N[sup ′]-phenyl-1,4 phenylenediamine). Ohmic injection of holes is achieved with an oxygen plasma cleaned...

  • The improved performance in inverted organic light-emitting diodes using the hybrid- p-doped hole transport layer. Qin, Dashan; Jin, Song; Chen, Yuhuan; Wang, Wenbo; Chen, Li // Applied Physics A: Materials Science & Processing;Aug2015, Vol. 120 Issue 2, p651 

    The inverted organic light-emitting diodes (IOLEDs) have been fabricated using the hybrid- p-doped hole transport layer consisting of MoO-doped N, N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB:MoO) and 2,3,5,6-Tetrafluoro-7,7,8,8,-tetracyano-quinodimethane-doped...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics