Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

June-O Song, K.; Dong-Seok Leem; Kwak, J.S.; Nam, O.H.; Park, Y.; Tae-Yeon Seong
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p4990
Academic Journal
We have investigated a Zn–Ni solid solution/Ag scheme for use in producing high-quality ohmic contacts for flip-chip light-emitting diodes (LEDs). The as-deposited contact shows nonlinear I–V characteristics. However, oxidizing the contacts at temperatures of 350–550 °C for 1 min in air ambient results in linear I–V behaviors, yielding specific contact resistances of 10[sup -4]–10[sup -5] Ω cm[sup 2]. In addition, LEDs are fabricated with the oxidized Zn–Ni solid solution/Ag contacts and Ag single contacts. The typical I–V characteristics of the LEDs with the annealed Zn–Ni solid solution (2.5 nm)/Ag (200 nm) p-type contact layers reveal a forward-bias voltage of 3.25 V at an injection current of 20 mA, which is much better than that of the LEDs with the Ag (200 nm) contact layers. © 2003 American Institute of Physics.


Related Articles

  • ITO/Ti/Au Ohmic contacts on n-type ZnO. Kang, B. S.; Chen, J. J.; Ren, F.; Li, Y.; Kim, H.-S.; Norton, D. P.; Pearton, S. J. // Applied Physics Letters;5/1/2006, Vol. 88 Issue 18, p182101 

    The specific contact resistivity and chemical intermixing of indium-tin-oxide (ITO)/Ti/Au Ohmic contacts on n-type bulk ZnO substrates are reported as a function of annealing temperature up to 450 °C. A minimum contact resistivity of 4.6×10-6 Ω cm2 was obtained at 50 °C and the...

  • Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes. Jeon, Joon-Woo; Park, Seong-Han; Jung, Se-Yeon; Lee, Sang Youl; Moon, Jihyung; Song, June-O; Seong, Tae-Yeon // Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092103 

    We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al–Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al–Ga solid solution layer is...

  • Ohmic hole injection in poly(9,9-dioctylfluorene) polymer light-emitting diodes. Poplavskyy, D.; Nelson, J.; Bradley, D. D. C. // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p707 

    Here we report the observation of ohmic hole injection from a conducting polymer anode into poly(9,9-dioctylfluorene) in a polymer light-emitting diode structure. Although initially nonohmic, the contact can be made locally ohmic by electrically conditioning the device at voltages higher than...

  • Ohmic and degradation mechanisms of Ag contacts on p-type GaN. Song, June-O; Kwak, Joon Seop; Park, Yongjo; Seong, Tae-Yeon // Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p062104 

    The electrical and optical properties of the Ag contacts have been investigated as a function of the annealing temperature. The as-deposited contact becomes good Ohmic with contact resistivity of 2.47×10-4 Ω cm2 and produces reflectance of ∼84% when annealed at 330 °C for 1 mm in...

  • Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN. Ho Won Jang; Jong-Lam Lee // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182108 

    Abnormal behavior of contact resistance with annealing in Ohmic contacts to laser-irradiated n-GaN is investigated. Ti/Al contacts on as-grown n-GaN shows no change in contact resistivity with annealing at the temperature range of 100–400 °C. However, the annealing results in the...

  • Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector. Lobo, N.; Rodriguez, H.; Knauer, A.; Hoppe, M.; Einfeldt, S.; Vogt, P.; Weyers, M.; Kneissl, M. // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p081109 

    We report on a nanopixel contact design for nitride-based ultraviolet light-emitting diodes to enhance light extraction. The structure consists of arrays of Pd ohmic contact pixels and an overlying Al reflector layer. Based on this design a twofold increase in the light output, compared to large...

  • Marked improvement in electroluminescence characteristics of organic light-emitting diodes using an ultrathin hole-injection layer of molybdenum oxide. Matsushima, Toshinori; Jin, Guang-He; Murata, Hideyuki // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p054501 

    We show that the performance of organic light-emitting diodes (OLEDs) is markedly improved by optimizing the thickness of a hole-injection layer (HIL) of molybdenum oxide (MoO3) inserted between indium tin oxide and...

  • Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts. Campbell, Alasdair J.; Bradley, Donal D. C.; Bradley, Donal D.C.; Antoniadis, Homer; Inbasekaran, Mike; Wu, Weishi W.; Woo, Ed P. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    We report detailed measurements on diode structures containing the electroluminescent polyfluorene copolymer poly(9,9-dioctylfluorene-co-bis-N,N[sup ′]-(4-methoxyphenyl)-bis-N,N[sup ′]-phenyl-1,4 phenylenediamine). Ohmic injection of holes is achieved with an oxygen plasma cleaned...

  • The improved performance in inverted organic light-emitting diodes using the hybrid- p-doped hole transport layer. Qin, Dashan; Jin, Song; Chen, Yuhuan; Wang, Wenbo; Chen, Li // Applied Physics A: Materials Science & Processing;Aug2015, Vol. 120 Issue 2, p651 

    The inverted organic light-emitting diodes (IOLEDs) have been fabricated using the hybrid- p-doped hole transport layer consisting of MoO-doped N, N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB:MoO) and 2,3,5,6-Tetrafluoro-7,7,8,8,-tetracyano-quinodimethane-doped...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics