TITLE

High-k lithium phosphorous oxynitride thin films

AUTHOR(S)
Zheng Wen Fu, R.; Wen-Yuan Liu, R.; Chi-Lin Li, R.; Qi-Zong Qin; Yin Yao, R.; Fang Lu
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5008
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lithium phosphorous oxynitride (Lipon) thin films have been fabricated onto n-Si substrate at room temperature by nitrogen plasma-assisted deposition of electron-beam reactive evaporated Li[sub 3]PO[sub 4]. The capacitance–voltage (C–V) and I–V characteristics of Al/Lipon/Si capacitors were measured. The accumulation, depletion, and inversion phenomena in the C–V curves of the as-deposited Lipon thin film could be clearly observed. The isothermal transient ionic current of Al/Lipon/Al as a function of time during voltage stepping from 0 to 3 V exhibits a large current response due to dipole orientation. The dielectric constant of Lipon thin films is found to be 16.6, and the leakage current density at an applied electric field of 5 kV/cm is about 6.0×10[sup -7] A/cm[sup 2]. These results suggest that lithium phosphorous oxynitride thin films are high-k materials. The incorporation of N into amorphous of Li[sub 3]PO[sub 4] could significantly increase the dielectric constant of Lipon thin films. © 2003 American Institute of Physics.
ACCESSION #
11649655

 

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