Sharp ferroelectric phase transition in strained single-crystalline SrRuO[sub 3]/Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3]/SrRuO[sub 3] capacitors

Dittmann, R.; Plonka, R.; Vasco, E.; Pertsev, N.A.; He, J.Q.; Jia, C.L.; Hoffmann-Eifert, S.; Waser, R.
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5011
Academic Journal
Single-crystalline all-perovskite SrRuO[sub 3]/Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3]/SrRuO[sub 3] thin-film capacitors epitaxially grown on SrTiO[sub 3] exhibit a sharp paraelectric-to-ferroelectric phase transition at 350 K with a maximum permittivity of about 6660. This value is comparable to that of bulk ceramics and exceeds by several times the highest values reported for Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3] thin film capacitors. The observed thickness dependence of the dielectric response is analyzed with the aid of a thermodynamic theory. It is shown that a weak decrease of the permittivity with the Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3] thickness decreasing from 200 to 10 nm can be explained solely by the thickness-dependent strain relaxation in epitaxial films without assuming the presence of low-permittivity layers at the film/electrode interfaces. © 2003 American Institute of Physics.


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