TITLE

Design and ferroelectric properties of polar-axis-oriented polycrystalline Bi[sub 4-x]Pr[sub x]Ti[sub 3]O[sub 12] thick films on Ir/Si substrates

AUTHOR(S)
Matsuda, Hirofumi; Ito, Sachiko; Iijima, Takashi
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5023
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A route for polar-axis-oriented films with Bi[sub 4]Ti[sub 3]O[sub 12] (BIT)-type structure was presented. Bi[sub 4-x]Pr[sub x]Ti[sub 3]O[sub 12] (x=0.0, 0.3, 0.5, 0.7) films were grown on Ir/Si substrates from chemical solutions and formation of IrO[sub 2] from Ir layers fostered the nucleation of grains with a and b axes mixed orientation by lattice matching and pseudo-orthogonal c axes was aligned in-plane. Furthermore, by setting the heat treatment temperature for grain growth above the Curie temperature T[sub C], the residual strain between the film and Si introduced lateral stress on cooling and aligned the ferroelectric polar axis separately along the film normal leaving the nonpolar axis in-plane. The polar-axis-oriented film exhibited superb ferroelectric properties with remanent and saturation polarizations of 2P[sub r]=92 and P[sub sat]=50 μC/cm[sup 2] (x=0.3). © 2003 American Institute of Physics.
ACCESSION #
11649650

 

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