TITLE

Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces

AUTHOR(S)
Albrecht, P.M.; Lyding, J.W.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5029
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-walled carbon nanotubes (SWNTs) have been studied on a Si(100)-2×1:H surface using an ultrahigh-vacuum (UHV) scanning tunneling microscope (STM). Dry deposition of SWNTs in situ establishes the pristine interface necessary to elucidate fundamental physical and electronic interactions between SWNTs and silicon. We have achieved simultaneous atomic resolution STM images of isolated SWNTs and the local H-passivated Si(100) substrate. Scanning tunneling spectroscopy served to characterize both semiconducting and metallic SWNTs. In each case, electronic features unique to the nanotube can be identified within the substrate band gap. In contrast to previous UHV STM studies of SWNTs on Au(111), our investigation is motivated by the technological relevance of the Si(100) substrate and the potential for nanofabrication of hybrid SWNT-Si electronic devices on the Si(100)-2×1:H platform. © 2003 American Institute of Physics.
ACCESSION #
11649648

 

Related Articles

  • Scanning tunneling microscopy of [112] oriented steps on a cleaved Si(111) surface. Tokumoto, Hiroshi; Wakiyama, Shigeru; Miki, Kazushi; Okayama, Shigeo // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p743 

    Scanning tunneling microscopy on cleaved Si(111) surfaces reveals stress-induced microstructures with two types of terraces: triangular-shaped terraces and long and narrow terraces with parallel [112] oriented steps, which is contrary to the previous observation [112] steps. Dimer rows in...

  • Investigation of the (111) surface of P-doped Si by scanning tunneling microscopy. Trappmann, T.; Sürgers, C.; v. Löhneysen, H. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 2, p167 

    Abstract. The (111) surface of P-doped Si obtained by cleaving in ultrahigh vacuum has been investigated by means of scanning tunneling microscopy at room temperature for samples with dopant concentrations below and above the metal-insulator transition. Domains and extended anti-phase boundaries...

  • Adsorption and growth of Al on Si(100) in the initial stage. Zhu, C.X.; Misawa, S.; Tsukahara, S.; Kawazu, A.; Pang, S.J. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 2, p145 

    Abstract. The adsorption structures and growth of Al on Si(100) have been intensively studied using scanning tunneling microscope (STM). The high-resolution STM images are presented to demonstrate that the Al-adsorbed Si(100) surface is accurately described by the parallel-dimer model. The...

  • Nanoscale study of the as-grown hydrogenated amorphous silicon surface. Stutzin, G. C.; Ostrom, R. M.; Gallagher, Alan; Tanenbaum, D. M. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p91 

    Studies the topography of an amorphous silicon surface. Technical applications of thin films of hydrogenated amorphous silicon; Examples of the probe-sample contact transform that occurs in scanning tunneling microscopy; Significance of voids to thin films of hydrogenated amorphous silicon.

  • Reconstructed silicon surfaces for calibration of scanning tunnel microscopes. Kuzin, A.; Todua, P.; Panov, V.; Oreshkin, A. // Measurement Techniques;Oct2012, Vol. 55 Issue 7, p773 

    The feasibility of using a reconstructed 7×7-Si(111) surface and monatomic steps on this surface as reference samples for calibration of ultrahigh vacuum scanning tunneling microscopes is demonstrated.

  • Regular stepped structures on clean Si(hhm)7×7 surfaces. Chaika, A. N.; Fokin, D. A.; Bozhko, S. I.; Ionov, A. M.; Debontridder, F.; Dubost, V.; Cren, T.; Roditchev, D. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    Regular single and triple step arrays with different periodicities have been fabricated in ultrahigh vacuum on clean Si(557) surfaces at various thermal treatment procedures. The atomic structure of the triple step staircases has been studied with high resolution scanning tunneling microscopy...

  • Experimental imaging of silicon nanotubes. De Crescenzi, M.; Castrucci, P.; Scarselli, M.; Diociaiuti, M.; Chaudhari, Prajakta S.; Balasubramanian, C.; Bhave, Tejashree M.; Bhoraskar, S. V. // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p231901 

    Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a...

  • Atomically Clean Integration of Carbon Nanotubes with Silicon. Albrecht, P. M.; Lyding, J. W. // AIP Conference Proceedings;2004, Vol. 723 Issue 1, p173 

    We have optimized an in situ dry contact transfer (DCT) technique for the ultra-clean deposition of single-walled carbon nanotubes (SWNTs) onto H-passivated and clean Si(100) surfaces. Following DCT in ultrahigh vacuum (UHV), a scanning tunneling microscope (STM) is used to elucidate the...

  • Band-gap opening in metallic carbon nanotubes adsorbed on H/Si(001). Jung-Yup Lee; Jun-Hyung Cho // Applied Physics Letters;7/10/2006, Vol. 89 Issue 2, p023124 

    A recent scanning tunneling microscope nanolithography technique can fabricate one-dimensional “dangling-bond (DB) wire” by the selective removal of H atoms from a H-passivated Si(001) surface along the Si dimer row. We here theoretically investigate the bonding geometry, band...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics