TITLE

Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

AUTHOR(S)
Kamenev, B.V.; Grebel, H.; Tsybeskov, L.; Kamins, T.I.; Williams, R. Stanley; Baribeau, J.M.; Lockwood, D.J.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5035
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using polarized Raman spectroscopy, we examine different vibrational modes (i.e., Si–Si, Si–Ge, and Ge–Ge) in Si/Ge self-organized nanostructures. Here, we present unambiguous proof that multilayers of Ge nanometer-size, “dome-shaped” islands grown on a <100> Si substrate are nearly fully relaxed and that the built-in strain field is substantially localized in the surrounding Si matrix. In contrast, multilayers with “pyramid-shaped” islands do not show observable relaxation. The large strain in the Si layers of the multilayer dome samples correlates with the greater self-organization in these structures compared to the multilayer pyramid samples. © 2003 American Institute of Physics.
ACCESSION #
11649646

 

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