TITLE

Effect of nitrogen addition on the morphology and structure of boron-doped nanostructured diamond films

AUTHOR(S)
Qi Liang; Catledge, Shane A.; Vohra, Yogesh K.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5047
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A chemical vapor deposition hydrogen/methane/nitrogen feedgas mixture with unconventional high methane (15% CH[sub 4] by volume) normally used to grow ultrahard and smooth nanostructured diamond films on Ti–6Al–4V alloy substrates was modified to include diborane (10% B[sub 2]H[sub 6] in hydrogen) for boron doping. The flow rates of N[sub 2] were varied to investigate its effect on plasma chemistry, film morphology, and mechanical properties. As expected, boron is readily incorporated into the diamond film and results in a change in the lattice parameter. Nitrogen, on the other hand, competes with boron in the plasma and acts to prevent boron incorporation into the diamond structure. Glancing angle x-ray diffraction indicates a decrease of diamond lattice parameter with increasing N[sub 2]/CH[sub 4] flow rate ratio. A critical N[sub 2]/CH[sub 4] ratio of 0.4 was found to result in a film with a minimum in grain size and surface roughness, along with high boron incorporation (∼4×10[sup 20] cm[sup -3]). As shown from this critical limit, experimental conditions can be optimized to produce ultrahard, boron doped nanostructured diamond films with the potential for high temperature applications. © 2003 American Institute of Physics.
ACCESSION #
11649642

 

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