TITLE

AlGaAs/GaAs quantum wires with high photoluminescence thermal stability

AUTHOR(S)
Liu, X.-Q.; Wang, X.-L.; Ogura, M.; Guillet, T.; Voliotis, V.; Grousson, R.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5059
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a 5 nm thick V-shaped AlGaAs/GaAs single quantum wire (QWR) that showed high photoluminescence (PL) thermal stability as a result of our recent progress in fabrication techniques. The integrated PL intensity of the QWR sample was quenched only by a factor of about 2.5 when the temperature was increased from 5 to 300 K. This sample also showed higher PL thermal stability over the whole temperature range than a 5 nm thick single quantum well reference sample grown under similar conditions. © 2003 American Institute of Physics.
ACCESSION #
11649638

 

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