Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer

Jung Chul Kim, W.; Jong Hyun Choi; Seung Soo Kim; Kyu Man Kim; Jin Jang
December 2003
Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5068
Academic Journal
Amorphous silicon was crystallized by metal-induced crystallization through a cap with a Ni area density of 2×10[sup 14] atoms/cm[sup 2] on the cap. The crystallized polycrystalline silicon (poly-Si) shows hexagonal-shaped or disk-shaped grains with average grain size of ∼40 μm. The p-type channel thin-film transistor (TFT) on a single-grain poly-Si exhibited a field-effect mobility of 114 cm[sup 2]/V s, a threshold voltage of -4.7 V and a subthreshold slope of 0.5 V/dec. The gate bias-stressed changes in the TFT performance was found to be greatly reduced compared to the laser-annealed poly-Si TFT. The surface roughness of the poly-Si is 2.35 nm smaller than that of conventional excimer laser-annealed poly-Si (13.1 nm), which appears to be related to better device performance and improved stability. © 2003 American Institute of Physics.


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