Electrical properties of a highly oriented, textured thin film of the ionic conductor Gd:CeO[sub 2-δ] on (001) MgO

Chen, L.; Chen, C. L.; Chen, X.; Donners, W.; Liu, S. W.; Lin, Y.; Huang, D. X.; Jacobson, A. J.
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4737
Academic Journal
Highly oriented ionic conductor gadolinium-doped CeO[sub 2-δ] (Ce[sub 0.8]Gd[sub 0.2]O[sub 2-δ]) thin films have been grown on single-crystal (001) MgO substrates by pulsed-laser ablation. The films are highly c-axis oriented with cube-on-cube epitaxy, as shown by x-ray diffraction and electron microscopy. The interface relationship is, surprisingly, found to be (001)[sub film]//(001)[sub sub] and [100][sub film]//[100][sub sub] with an extremely large lattice misfit of more than 28%. Ac impedance measurements in the temperature range of 500 to 800 °C reveal that electrical conductivity is predominantly ionic over a very broad oxygen partial pressure range from pO[sub 2] from 1×10[sup -19] atm to 1 atm. The activation energy E[sub a] for ionic conductivity measured on unannealed films is 0.86 eV, but after heat treatment, E[sub a] decreases to 0.74 eV. © 2003 American Institute of Physics.


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