Thermal stability of epitaxial Pt films on Y[sub 2]O[sub 3] in a metal-oxide–Si structure

Cho, M.-H.; Moon, D. W.; Min, K. H.; Sinclair, R.; Park, S. A.; Kim, Y. K.; Jeong, K.; Kang, S. K.; Ko, D.-H.
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4758
Academic Journal
High-quality epitaxial Pt films were grown by a sputtering deposition method using epitaxial Y[sub 2]O[sub 3] as a dielectric buffer layer. A high degree of crystallinity was achieved with an ion-beam minimum channeling yield (χ[sub min]) of ∼11%, and a high degree of coherence between the film surface and interface was obtained for the Pt(111)/Y[sub 2]O[sub 3](111)/Si, with a large lattice mismatch. High-resolution transmission electron microscopy results showed that the atomic arrangement at the interface between the Pt and the oxide was well ordered, and no perceptible interdiffusion was observed, even at an annealing temperature of up to 700 °C under an oxygen atmosphere. The atomic arrangement at the Pt/Y[sub 2]O[sub 3] interface was drastically degraded after a high-temperature annealing at 900 °C due to the deformation of Y[sub 2]O[sub 3]. © 2003 American Institute of Physics.


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