Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy

Chang, Y.; Badano, G.; Zhao, J.; Grein, C. H.; Sivananthan, S.; Aoki, T.; Smith, David J.
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4785
Academic Journal
Crater defects on the surfaces of HgCdTe epilayers grown by molecular beam epitaxy have been investigated. A semiempirical model coupled with observations by transmission electron microscopy was used to analyze the defect formation mechanism. We find that Te[sub 2] dissociation plays an important role. The defect density can be controlled by adjusting growth conditions such as the substrate growth temperature, Hg flux, growth rate and composition. Tight control over the pretreatment procedures before molecular beam epitaxy growth is also necessary. © 2003 American Institute of Physics.


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