High performance field-effect transistors made of a multiwall CN[sub x]/C nanotube intramolecular junction

Kai Xiao, Ramki; Yunqi Liu; Ping'an Hu, Ramki; Gui Yu; Lei Fu; Daoben Zhu
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4824
Academic Journal
Field-effect transistors (FETs) based on an individual CN[sub x]/C nanotube (NT) were fabricated by focus ion-beam technology. The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated more than four orders of magnitude at room temperature. The electron mobility of a CN[sub x]/C NT FET estimated from its transconductance was as high as 3.84×10[sup 3] cm[sup 2]/V s. The n-type gate modulation could be explained as due the effect of bending of the valence band in the Schottky-barrier junction. © 2003 American Institute of Physics.


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