Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Kang, B. S.; Kim, S.; Kim, J.; Ren, F.; Baik, K.; Pearton, S. J.; Gila, B. P.; Abernathy, C. R.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.; Chandrasekaran, V.; Sheplak, M.; Nishida, T.; Chu, S. N. G.
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4845
Academic Journal
The changes in the conductance of the channel of Al[sub 0.3]Ga[sub 0.7]N/GaN high-electron-mobility transistor structures during the application of both tensile and compressive strain were measured. For a fixed Al mole fraction, the changes in the conductance were roughly linear over the range up to 2.7×10[sup 8] N cm[sup -2], with coefficients for planar devices of -6.0+/-2.5×10[sup -10] S N[sup -1] m[sup -2] for tensile strain and +9.5+/-3.5×10[sup -10] S N[sup -1] m[sup -2] for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5+/-1.1×10[sup -13] S N[sup -1] m[sup -2] for tensile strain and 4.8×10[sup -13] S N[sup -1] m[sup -2] for compressive strain. The large changes in the conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications. © 2003 American Institute of Physics.


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