High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

Cheng-Xin Wang, Kenji; Guo-Wei Yang, Kenji; Tie-Chen Zhang, Kenji; Hong-Wu Liu, Kenji; Yong-Hao Han, Kenji; Ji-Feng Luo, Kenji; Chun-Xiao Gao, Kenji; Guang-Tian Zou, Kenji
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4854
Academic Journal
We presented the results on the fabrication and characterization of high-quality heterojunction between p-type diamond single-crystalline film and n-type cubic boron nitride (c-BN) bulk single crystal. By employing a simple surface diffusion, we prepared the n-type c-BN bulk single crystals with relatively low resistivity (1.0×10[sup -1] Ω cm). Combining p-type diamond films grown by chemical vapor deposition with n-type c-BN, we fabricated a high-quality heterojunction bipolar p–n diode, which the turn-on voltage of the heterojunction was 0.85 V, and the current density reached to 170 A/m2 when the forward bias was applied to 3 V. © 2003 American Institute of Physics.


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