Electrical-field control of metal–insulator transition at room temperature in Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3]/La[sub 1-x]Ba[sub x]MnO[sub 3] field-effect transistor

Kanki, Teruo; Park, Young-Geun; Tanaka, Hidekazu; Kawai, Tomoji
December 2003
Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4860
Academic Journal
We have constructed field-effect transistor structures that consist of a ferromagnetic (La,Ba)MnO[sub 3] channel and a ferroelectric PbZr[sub 0.2]Ti[sub 0.8]O[sub 3] gate insulator with the aim of controlling the metal–insulator transition at room temperature by applying an electric field. Investigations have revealed that the transition temperature changed from 237.0 K to 242.0 K for the La[sub 0.90]Ba[sub 0.10]MnO[sub 3] channel layer by ferroelectric remnant polarity (±50 μC/cm[sup 2]) and from 280.5 K to 283.0 K (±26 μC/cm[sup 2]) for the La[sub 0.85]Ba[sub 0.15]MnO[sub 3] channel layer. These shifts, which are linearly proportional to the magnitude of ferroelectric remnant polarization, are induced by the accumulation charge due to the electric field. © 2003 American Institute of Physics.


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