Optical amplification of the cutoff mode in planar asymmetric polymer waveguides

Pauchard, M.; Vehse, M.; Swensen, J.; Moses, D.; Heeger, A. J.; Perzon, E.; Andersson, M. R.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4488
Academic Journal
Modes with low threshold for optical gain were observed at wavelengths close to the cutoff in experiments probing the amplified spontaneous emission of light-emitting polymer thin films. The polymer was the semiconductor layer in a multilayer semiconductor–insulator–metal structure that simulates the one-dimensional waveguide characteristics in the channel of a field-effect transistor. The “cutoff” mode propagates at the polymer/gate-insulator interface, has an optical gain threshold of approximately 10 kW/cm[sup 2], and is not influenced by absorption of the gate electrode. The wavelength of the amplified emission tracks the cutoff wavelength of the asymmetric double-waveguide structure and the cutoff mode is, therefore, tunable in wavelength. Our results suggest that the light-emitting field-effect transistor architecture is a promising route for the construction of an injection laser. © 2003 American Institute of Physics.


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