Interface stability and solid-state amorphization in an immiscible Cu–Ta system

Gong, H. R.; Liu, B. X.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4515
Academic Journal
Assisted by ab initio calculation, a realistic Cu–Ta potential is derived and applied to determine the energies of Cu/Ta interfaces with various orientations by molecular dynamics simulations. It turns out that the (111) Cu/(100) Ta and (111) Cu/(110) Ta interfaces are thermally stable at a temperature of 873 K and that for the other Cu/Ta interfaces, the interface energies are sufficiently high to drive interfacial reaction and solid-state amorphization, which features an asymmetric behavior, i.e., the amorphous interlayer grows faster toward Cu than that toward Ta. © 2003 American Institute of Physics.


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