Photoluminescence properties of in situ Tm-doped Al[sub x]Ga[sub 1-x]N

Hömmerich, U.; Ei Ei Nyein, U.; Lee, D. S.; Steckl, A. J.; Zavada, J. M.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4556
Academic Journal
We report on the photoluminescence (PL) properties of in situ Tm-doped Al[sub x]Ga[sub 1-x]N films (0≤x≤1) grown by solid-source molecular-beam epitaxy. It was found that the blue PL properties of Al[sub x]Ga[sub 1-x]N:Tm greatly change as a function of Al content. Under above-gap pumping, GaN:Tm exhibited a weak blue emission at ∼478 nm from the [sup 1]G[sub 4]→[sup 3]H[sub 6] transition of Tm[sup 3+]. Upon increasing Al content, an enhancement of the blue PL at 478 nm was observed. In addition, an intense blue PL line appeared at ∼465 nm, which is assigned to the [sup 1]D[sub 2]→[sup 3]F[sub 4] transition of Tm[sup 3+]. The overall blue PL intensity reached a maximum for x=0.62, with the 465 nm line dominating the visible PL spectrum. Under below-gap pumping, AlN:Tm also exhibited intense blue PL at 465 and 478 nm, as well as several other PL lines ranging from the ultraviolet to near-infrared. The Tm[sup 3+] PL from AlN:Tm was most likely excited through defect-related complexes in the AlN host. © 2003 American Institute of Physics.


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