Gate-controlled electron g factor in an InAs-inserted-channel In[sub 0.53]Ga[sub 0.47]As/In[sub 0.52]Al[sub 0.48]As heterostructure

Nitta, Junsaku; Lin, Yiping; Tatsushi Akazaki, Yiping; Takaaki Koga, Yiping
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4565
Academic Journal
The electron g factor in an InAs-inserted-channel In[sub 0.53]Ga[sub 0.47]As/In[sub 0.52]Al[sub 0.48]As heterostructure is studied by measuring the angle dependence of magnetotransport properties. The gate voltage dependence of the g factor is obtained from the coincidence method. The g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and close to the bare g-factor value of In[sub 0.53]Ga[sub 0.47]As. A large change in the g factor is observed by applying the gate voltage. The gate voltage dependence is not simply explained by the energy dependence of the g factor. © 2003 American Institute of Physics.


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