Resistive switching in metal–ferroelectric–metal junctions

Contreras, J. Rodríguez; Kohlstedt, H.; Poppe, U.; Waser, R.; Buchal, C.; Pertsev, N. A.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4595
Academic Journal
The aim of this work is to investigate the electron transport through metal–ferroelectric–metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3]/SrRuO[sub 3] junctions have been fabricated on lattice-matched SrTiO[sub 3] substrates. The current–voltage (I–V) characteristics of the MFM junctions involving a few-nanometer-thick Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3] barriers have been recorded at temperatures between 4.2 K and 300 K. Typical I–V curves exhibit reproducible switching events at well-defined electric fields. The mechanism of charge transport through ultrathin barriers and the origin of the observed resistive switching effect are discussed. © 2003 American Institute of Physics.


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