Enhancement of Mn luminescence in ZnS:Mn multi-quantum-well structures

Taghavinia, N.; Makino, H.; Yao, T.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4616
Academic Journal
Multi-quantum-well structures of ZnS:Mn-SiO[sub 2] were prepared by sequential rf sputtering. The thickness of ZnS:Mn layers differed from 2 to 10 nm, while that of SiO[sub 2] layers was 40 nm. It was shown that the efficiency of Mn luminescence is considerably larger in samples with ZnS:Mn thickness of 2 nm compared to samples with thicker layers. A possible mechanism to explain this effect is the formation of quantum-dot-like features in the low thickness layers, resulting in regions with higher local Mn concentration, hence higher luminescence efficiency. © 2003 American Institute of Physics.


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