Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

Li, P. W.; Liao, W. M.; Lin, S. W.; Chen, P. S.; Lu, S. C.; Tsai, M.-J.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4628
Academic Journal
A complementary metal-oxide-semiconductor-compatible method is proposed to form atomic-scale germanium (Ge) quantum dots (<10 nm) for application in single-electron devices or optical devices. The formation of Ge quantum dots is realized by the Ge atoms’ segregation and agglomeration during thermal oxidation of Si[sub 1-x]Ge[sub x] alloys. The size and distribution of the Ge dots are determined by conditions of thermal oxidation process and Ge content in the alloys. An average Ge-dot size of 5.1 nm with standard deviation of 1.79 nm and a comparatively uniform spatial distribution (dot density of 7.9×10[sup 11] cm[sup -2]) could be obtained by selective oxidation of Si[sub 0.85]Ge[sub 0.15]/Si-on-insulator structure. © 2003 American Institute of Physics.


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